MOSYS INC. Announces Licensing Agreement With LG Electronics
SUNNYVALE, Calif.--Sept. 26, 2005--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions announced today the licensing of MoSys' 1T-SRAM(R) high-density embedded memory technology by LG Electronics for high-volume consumer electronic applications.
"The benefits of 1T-SRAM based products are obvious," says Heesub Lee, vice president of engineering at LG Electronics. "By delivering an optimum combination of density, speed and power dissipation MoSys' embedded memories allow LG Electronics to maintain our consumer products in a leadership position in terms of performance, quality and cost advantages."
"LG Electronics is a powerhouse in consumer electronics and cellular handsets," said Chet Silvestri, Chief Executive Officer of MoSys, Inc. "And we are very pleased that they have chosen our 1T-SRAM technology for their consumer electronic applications."
ABOUT MOSYS, INC.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 90 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
|
Related News
- Hynix Semiconductor, LG Electronics, Samsung Electronics and Silicon Image Sign Long-Term Agreement to Create the Next-Generation Memory Interface Technology Specification
- LG Electronics Shipping MoSys 1T-SRAM(R) DDI Technology in AMOLED-Based Mobile Phone
- NEC Electronics Embeds MoSys' 1T-SRAM Memory Technology in 90nm Custom ASIC; Companies Extend Agreement To Use 1T-SRAM In Upcoming Consumer Applications
- LG Electronics Chooses MoSys’ 1T-SRAM Embedded Memory Technology For Consumer Applications
- VeriSilicon's Vector Graphics GPU is selected by LG Electronics
Breaking News
- Ceva multi-protocol wireless IP could simplify IoT MCU and SoC development
- Controversial former Arm China CEO founds RISC-V chip startup
- Fundamental Inventions Enable the Best PPA and Most Portable eFPGA/DSP/SDR/AI IP for Adaptable SoCs
- Cadence and TSMC Collaborate on Wide-Ranging Innovations to Transform System and Semiconductor Design
- Numem at the Design & Reuse IP SoC Silicon Valley 2024
Most Popular
- GUC provides 3DIC ASIC total service package to AI/HPC/Networking customers
- Qualitas Semiconductor Appoints HSRP as its Distributor for the China Markets
- Siemens collaborates with TSMC on design tool certifications for the foundry's newest processes and other enablement milestones
- Credo at TSMC 2024 North America Technology Symposium
- Huawei Mate 60 Pro processor made on SMIC 7nm N+2 process
E-mail This Article | Printer-Friendly Page |