MoSys Licenses 1T-SRAM for Advanced 55NM Process Technology to NEC Electronics
Technology to Help Drive New Advances in IC Products for Innovative Consumer, Networking, Graphics Applications
SUNNYVALE, CA -- May 23, 2007 -- MoSys, Inc., the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced that NEC Electronics (TSE: 6723) has licensed MoSys' 1T-SRAM technology for use in the semiconductor manufacturer's cutting-edge 55-nm process. The combination of Mosys' 1T-SRAM and NEC Electronics' 55-nm embedded DRAM process technology can produce integrated circuit (IC) devices with the low cost and low power consumption characteristics needed to enable next-generation consumer products. The high-speed attributes of the MoSys 1T-SRAM also enables the technology to address high-performance networking and graphics applications.
"The move to 55-nm is further evidence of the rapid scalability of our 1T-SRAM technology. We have been able to continuously scale this technology from 250nm to the current 55nm node. We will continue to rapidly scale to 45nm and beyond," said Chet Silvestri, president and CEO of MoSys. "This scalability ensures our customers will have access to our high density memory technology in the industry's most advanced process technologies. Extending our partnership with NEC Electronics to include 55nm is an important milestone in delivering on this promise."
About MoSys Inc.
Founded in 1991, MoSys develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys patented 1T-SRAM offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered in Silicon Valley with a design center in Korea. More information is available at www.mosys.com.
|
Related News
- Fujitsu Licenses MoSys 1T-SRAM(R) Technology for Its Leading-Edge 65nm Semiconductor Manufacturing Process
- NEC Electronics Embeds MoSys' 1T-SRAM Memory Technology in 90nm Custom ASIC; Companies Extend Agreement To Use 1T-SRAM In Upcoming Consumer Applications
- AVID Electronics Licenses MoSys' 1T-SRAM Embedded Memory; SoC Design Company Uses 1T-SRAM Memory in Consumer Electronic Products
- MoSys Licenses Advanced 1T-SRAM Embedded Memory to Agilent Technologies
- SwitchCore Licenses MoSys' Advanced 1T-SRAM Embedded Memory
Breaking News
- Arm revenues up 47%; shares fall
- Sondrel awarded new Video Processor ASIC design and supply contract for a leading provider of High-Performance Video systems
- X-Silicon Announces a NEW Low-Power Open-Standard Vulkan-Enabled C-GPU™ - a RISC-V Vector CPU Infused with GPU ISA and AI/ML acceleration in a Single Processor Core
- Softbank reported to be in talks to buy Graphcore
- VESA Elevates PC and Laptop HDR Display Performance with Updated DisplayHDR Specification
Most Popular
- Synopsys Enters Definitive Agreement to Sell its Software Integrity Business to Clearlake Capital and Francisco Partners
- Fabless semiconductor startup Mindgrove launches India's first indigenously designed commercial high-performance MCU chip
- sureCore announces successful tape-out of cryogenic IP demonstrator
- Siemens delivers end-to-end silicon quality assurance for next-generation IC designs with new Solido IP Validation Suite
- Announcing Availability of Silicon-Proven 12bit 1Msps SAR ADC IP Core for Whitebox Licensing with Royalty Free
E-mail This Article | Printer-Friendly Page |